Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films
نویسندگان
چکیده
Films of hafnium oxide (HfO 2 ) were synthesized on a silicon substrate by magnetron sputtering target with similar composition. The results studies the structural composition HfO films and electrical properties metal-insulator-semiconductor (Ni-HfO_2-n-Si) structures are presented Keywords: Metal-dielectric-semiconductor (MDS) structures, ferroelectric films, piezoelectric response, microstructure, properties.
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ژورنال
عنوان ژورنال: Fizika tverdogo tela
سال: 2023
ISSN: ['0367-3294', '1726-7498']
DOI: https://doi.org/10.21883/pss.2023.04.55995.8